ese.rn.i~ conductor , one. 20 stern ave. springfield, new jersey 07081 u.s.a. maximum ratings c122 series telephone: (201) 376-2922 (212)227-6005 fax: (201) 376-8960 rating (noti 2) r?p?(itlv? peak off-state voltage repttltlve peak reverie voltage c122f c122a C122B c122c c122d c122e c122m non-repetitive peak rtvene voltage c122f c122a cu2b c122c c1220 c122e ci22m forward current rms tc * '6"c (all conduction anglei) peak forward surge current (v2 cycle, sine wave, 60 hi) circuit futlng coniiderationi (1 - 8.3 mi) symbol vdrm vrrm vrsm 't(rms) itsm 1*1 value so 100 200 300 400 500 600 __ 75 200 300 400 600 600 700 e 90 34 unit volte volt* arnpe ampe a2| rating (note 2) forward peak gate power (t - 10 ml forward average gate power forward peek gate current operating junction temperature range storage temperature range symbol pgm pg(av) ?gm tj titg value 5 0.5 2 -40 to + 100 -40 to + 125 unit w?n? watt ampi ?c ?c (2) add itid form turfl* t)?i>gmtof "i i" to pll numbir lor if id eonflgurinoni 2 |hru 6 s?? thyrlitor stltctlon ouldt '0' informitlon. thermal characteristics characterlitlc thermal resilience, junciion to c?s8 symbol rojc max 18 unit ?carv electrical characteristics (tc . 26 c unless oiherwue no chinctfrlitlc peak forward or flevene blocking current (rated vdrm or vrrm) tc - 25'c tc ? wc peak on-state vomage 111 htm ? 16 a peek, tc '? z5"ci gate trigger current (continuous del (vq ? 6 v, rl ? 91 ohmi. tc - 25'c) (vo - 6 v, r|. ? 45 ohms, tc . -40'ct gate trigger voltage (continuous del (vd . 6 v, rl - 91 ohmi, tc . 25"c) (vo - 6 v, rl - 45 ohmi, tc . -40'ci (vp ? rated vorm, rj. ? 1000 ohms, tc ? wc) holding current (vq ? 24 vde, it ? 0.5 a, o.i 10 10 mi puiie. gate trigger source ? 7 v, 20 ohmil tc ? 25'c tc - -40'c turn-ok time ivq " rated vorvi' (itm - 8 ar ir ? 8 a) critical rate-of'riee of oh'stme voltage (vd ? rated vorm. linear, tc ? 100'c) 1 symbol 'orm' 'rrm vtm iqt vgt ih 'q dv/dt mln - ? - 0.2 - _. ~- typ - ? - - - 50 60 max 10 0.5 1.83 25 40 1.6 2 30 - 60 ? _~ unit ma ? ma voltl ? ma voltl. ma v* vim quality semi-conductors
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